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* High Collector-Emitter Sustaining Voltage -- VCEO(sus) = 100 Vdc (Min) * DC Current Gain @ IC = 3.0 Adc -- hFE = 25 (Min) * Low Collector-Emitter Saturation Voltage -- VCE(sat) = 1.0 Vdc (Max) @ IC = 3.0 Adc . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits.
(1) Indicates JEDEC Registered Data.
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
High-Voltage High-Power Silicon Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
THERMAL CHARACTERISTICS (1)
MAXIMUM RATINGS (1)
REV 7 Thermal Resistance, Junction to Case Operating and Storage Junction, Temperature Range Total Device Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous Peak Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Characteristic Rating Safe area limits are indicated by Figure 5. Both limits are applicable and must be observed. PD, POWER DISSIPATION (WATTS) 120 100 140 160 20 40 80 60 0 0 25 Symbol Symbol TJ, Tstg VCEO VCB VEB JC PD IC IB 50 75 100 125 150 TC, CASE TEMPERATURE (C)
Figure 1. Power Derating
- 65 to + 200
2N5758
150 0.857
1.17
Max
100
100
4.0
6.0 10
7.0
Watts W/_C
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
175
200
6 AMPERE POWER TRANSISTOR NPN SILICON 100 - 140 VOLTS 150 WATTS
2N5758
(See 2N4398)
Order this document by 2N5758/D
CASE 1-07 TO-204AA (TO-3)
2N5745
1
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2N5758
* Indicates JEDEC Registered Data (1) Pulse Test: Pulse Width 300 s, Duty Cycle (2) fT = |hfe| * ftest.
*ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS (1)
OFF CHARACTERISTICS
2
Small-Signal Current Gain (IC = 2.0 Adc, VCE = 10 Vdc, f = 1.0 kHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 MHz) Current-Gain -- Bandwidth Product (IC = 0.5 Adc, VCE = 20 Vdc, ftest = 0.5 MHz) Base-Emitter On Voltage (IC = 3.0 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 0.3 Adc) (IC = 6.0 Adc, IB = 1.2 Adc) DC Current Gain (IC = 3.0 Adc, VCE = 2.0 Vdc) (IC = 6.0 Adc, VCE = 2.0 Vdc) Emitter-Cutoff Current (VBE = 7.0 Vdc, IC = 0) Collector Cutoff Current (VCB = Rated VCB, IE = 0) Collector Cutoff Current (VCE = Rated VCB, VBE(off) = 1.5 Vdc) (VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150_C) Collector Cutoff Current (VCE = 50 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) *For PNP test circuit, reverse all polarities and D1.
v
Characteristic
-10 V - 4.0 V tr, tf 10 ns DUTY CYCLE = 1.0% RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
+10 V
0
25 s
Figure 2. Switching Time Test Circuit
v 2.0%
51
RB
D1 MUST BE FAST RECOVERY TYPE, eg: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA
VCEO(sus)
VCE(sat)
VBE(on)
Symbol
ICBO
ICEO
IEBO
ICEX
D1
Cob
hFE
hfe
Motorola Bipolar Power Transistor Device Data
fT VCC + 30 V RC Min 100 1.0 25 5.0 15 -- -- -- -- -- -- -- -- -- Max 300 100 -- 1.5 1.0 2.0 1.0 1.0 1.0 5.0 1.0 -- -- -- mAdc mAdc mAdc mAdc MHz Unit Vdc Vdc Vdc pF -- -- SCOPE
2N5758
1.0 0.7 0.5 t, TIME ( s) 0.3 0.2 VCC = 30 V IC/IB = 10 VBE(off) = 5.0 V TJ = 25C tr
0.1 0.07 0.05 0.06 0.1
td
0.2 0.4 0.6 2.0 1.0 IC, COLLECTOR CURRENT (AMP)
4.0
6.0
Figure 3. Turn-On Time
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2
D = 0.5 0.2 0.1 JC = 1.17C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) P(pk)
0.1 0.07 0.05 0.03 0.02
0.05 0.02 0.01 SINGLE PULSE
t2 DUTY CYCLE, D = t1/t2
t1
0.01 0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0 5.0 t, TIME (ms)
10
20
30
50
100
200 300
500
1000
Figure 4. Thermal Response
10 IC, COLLECTOR CURRENT (AMP) 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 BONDING WIRE LIMITED THERMALLY LIMITED @ TC = 25C SECOND BREAKDOWN LIMITED CURVES APPLY BELOW RATED VCEO 10 TJ = 200C
0.05 ms 0.1 ms 0.5 ms
1.0 ms 5.0 ms 2N5760 2N5758 300
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 200; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 200_C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
v
70 200 20 30 50 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. Active-Region Safe Operating Area
Motorola Bipolar Power Transistor Device Data
3
2N5758
6.0 4.0 3.0 t, TIME ( s) 2.0 ts VCC = 30 V IB1 = IB2 IC/IB = 10 TJ = 25C
1.0 0.6 0.4 0.3 0.06 0.1 1.0 0.2 0.4 0.6 2.0 IC, COLLECTOR CURRENT (AMP) 4.0 6.0 tf
Figure 6. Turn-Off Time
400 300 C, CAPACITANCE (pF) TJ = 25C
200 100 80 60 40 0.1
Cib
Cob
0.2
0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS)
50
100
Figure 7. Capacitance
500 200 hFE , DC CURRENT GAIN 100 50 - 55C TJ = 150C 25C VCE = 2.0 V
20 10 5.0 0.06
0.1
0.2 0.4 1.0 2.0 0.6 IC, COLLECTOR CURRENT (AMP)
4.0
6.0
Figure 8. DC Current Gain
4
Motorola Bipolar Power Transistor Device Data
2N5758
PACKAGE DIMENSIONS
A N C -T- E D U V
2 2 PL SEATING PLANE
K
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY.
0.13 (0.005) L G
1
TQ
M
Y
M
-Y-
H
B
-Q- 0.13 (0.005)
M
TY
M
DIM A B C D E G H K L N Q U V
INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188
MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
CASE 1-07 TO-204AA (TO-3) ISSUE Z
Motorola Bipolar Power Transistor Device Data
5
2N5758
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6
Motorola Bipolar Power Transistor Device Data
*2N5758/D*
2N5758/D

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